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Education
Case Western University Ph.D. 1968
Case Institute of Technology M.S. 1966
University of Dayton B.S. 1964
Industry
Experience
Bell Telephone Laboratories
Research
& Teaching
Electronics, Optoelectronics
Semiconductor Materials and Devices
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Since 1980, Professor Rode has been a
Professor of Electrical & Systems Engineering at Washington University.
Prior to that time he was the Technical Group Supervisor of the Compound
Semiconductor Group at Bell Telephone Laboratories-Murray Hill where his
group developed the World's first semiconductor lasers for use in fiber-optic
communications systems.
He is currently carrying out research in the areas of optoelectronics and
fiber optics, a new charge-injection theory of the bipolar transistor and
associated precision electronics, and the electron transport physics of
large-energy-gap semiconductors. Work in optoelectronics and fiber optics
applies to high-speed optical interconnects using fiber optics and polymer
optical waveguides to replace slower electrical interconnects in future
advanced electronic systems.
Professor Rode has also developed a number of novel semiconductor laser
diodes and high-speed light-emitting diodes for use in optoelectronics
applications. Work is in progress on new types of fiber-optic sensors. This
research involves crystal growth, photolithography, chemical etching of
semiconductor crystals, metallization, and other types of semiconductor wafer
processing and microfabrication as well as optical and electrical
characterization utilizing optical spectrometers, high-resolution x-ray
diffraction, high-speed superconducting sampling oscilloscopes and various
laser and fiber-optic measurement techniques.
Theoretical work on the charge-injection theory of bipolar transistors is
directed toward a detailed physical description of transistor behavior in
terms of fundamental electrical and thermal properties of advanced bipolar
transistors used in high-performance electronic and computing environments.
This physics-based treatment of the important high-speed bipolar transistor
allows one to determine the effects of crystal-growth, wafer materials, and
geometrical factors on the behavior of transistor devices from a knowledge of
the basic electronic physics of the semiconductor material. Operating
electronic regimes include very deep saturation, quasi-inverse, and
high-injection as well as the popular forward-active regime covered by
previous treatments.
Future applications of optoelectronic devices to high-power and
high-temperature environments require the use of exotic semiconductors with
larger energy gaps than those which are currently available. Recent
breakthroughs around the world in the crystal growth of group III-nitrogen
compounds such as gallium-nitride, indium-nitride, and aluminum-nitride have
created an exciting new potential for major progress in this area.
These materials also open the possibility of optoelectronic performance in
the near-ultraviolet and blue regions of the optical spectrum. Prof. Rode was
the first to theoretically describe some of the electronic properties of
gallium-nitride as early as 1973, but with recent experimental information
becoming available for the first time, much additional work needs to be done
to promote our understanding of the fundamental electron physics of these new
large-energy-gap compound semiconductors.
Professor Rode is the Director of the Optoelectronics Research Laboratory at
Washington University, He incorporated the International Conference on
Compound Semiconductor Manufacturing Technology (GaAs Mantech) as a
not-for-profit Missouri corporation and served as a member of the Executive
Committee and as Treasurer from its founding in 1986, managing its finances
and investments to the million-dollar level when he retired from GaAs Mantech
in 2004.
Professor Rode is also an avid rock gardener and woodland gardener. His
garden has been featured in such national publications as Garden Gate
Magazine and Woman's Day Magazine, and in local newspapers and magazines, as
well as on tours by the North American Rock Garden Society and the American
Conifer Society.
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Selected Publications
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"Charge-Injection Theory of Bipolar Junction Transistors," D. L.
Rode, J. Appl. Phys. 76, 4173 (1 October 1994).
"Electron Hall Mobility of
n-GaN," D.L. Rode and D. K. Gaskill, Appl. Phys. Letters 66,
1972-3 (April 10 1995).
"Efficient Coupling Technique for
Single-Mode Optical D-Fiber to Buried Polymer Acrylic Waveguides,"
(invited)
T. S. Barry, D.L. Rode and R. R. Krchnavek, Photonic Device Engineering for
Dual-Use Applications, SPIE vol. 2481,
Orlando, April 17-18, 1995.
"Efficient Multimode Optical
Fiber-to-Waveguide Coupling for Passive Alignment Applications in Multichip
Modules,"
T. S. Barry, D. L. Rode, M.H. Cordaro, R. R. Krchnavek and K. Nakagawa, IEEE
Trans. CPMT B 18, 685-90 (November 1995).
"Highly Efficient Coupling Between
Single-Mode Fiber and Polymer Optical Waveguides," T. S. Barry, D. L.
Rode, and
R. R. Krchnavek, IEEE Trans. CPMT B 20, 225-8 (August 1997).
"Low-Loss, Single-Mode, Organic
Polymer Waveguides Utilizing Refractive Index Tailoring," C. W. Phelps,
T. S. Barry,
D. L. Rode, and R. R. Krchnavek, IEEE J.of Lightwave Tech. 15, 1900-5
(September 1997).
"Do We Need a Roadmap?," Herbert
S. Bennett, Joseph G. Pellegrino, D. L. Rode, Thomas J. Shaffner, David G.
Seiler and
Emil Venere, Compound Semiconductor 5, 43-4 (April 1999).
"Device and Method for Monitoring
Fluids with a Detection of Cross Sectional Shape of Transmitted Beam,"
D.P. Ames and
D.L. Rode, U.S. Patent 6,043,505 (March 28, 2000).
"Analysis of electron transport in a
high-mobility free-standing GaN substrate grown by hydride vapor-phase
epitaxy,"
F. Yun, H. Morkoc, D.L. Rode, K.T. Tsen, L.A. Farina, C. Kurdak, S.S. Park
and K.Y. Lee, Mater. Res. Soc. Symp. Proc.,
680E, E2.2.1-6 (March 2001).
"Hall mobility and carrier
concentration in free-standing high-quality GaN templates grown by hydride
vapor-phase epitaxy,"
D. Huang, F. Yun, M.A. Reshchikov, D. Wang, H. Morkoc, D.L. Rode, L.A.
Farina, C. Kurdak, K.T. Tsen, S.S. Park and
K.Y. Lee, Solid-State Electronics, 45, 711-15 (2001).
"Silicon Epitaxy," Semiconductors
& Semimetals, eds. Danilo Crippa, Daniel L. Rode, and Maurizio Masi,
(Academic Press,
New York, 2001), Vol. 72.
"Hydrogenated amorphous and
microcrystalline GaAs films prepared by radio-frequency magnetron
sputtering,"
L. H. Ouyang, D. L. Rode, T. Zulkiflia, Barbara Abraham-Shrauner, N. Lewis,
and M. R. Freemane, J. Appl. Phys., 91, 3459-67 (March 2002).
"Optical characterization of
radio-frequency magnetron-sputtered gallium-arsenide films under non-uniform
thickness conditions," T. Zulkifli,
D. L. Rode, L. H. Ouyang, and Barbara Abraham-Shrauner, International Conference
on Compound Semiconductor Manufacturing Technology,
p.147-150, May 03-05, 2004 (Miami Beach, Florida).
"Coupling LEDs to Fiber," D. L.
Rode, Photonics Spectra Magazine, Vol. 38, Issue 8, p. 43, August 2004.
"Output Resistance of the Common-Emitter
amplifier," D. L. Rode, IEEE Trans. Electron Devices, 52, 2004-8
(September 2005).
"Subnanometer surface roughness of dc
magnetron sputtered Al films,"
D. L. Rode, V. R. Gaddam, and Ji Haeng Yi, J. Appl. Phys., 102, 024303
(July 2007).
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